http://repository.vnu.edu.vn/handle/VNU_123/25965
When biased at a voltage just below a superconductor’s energy gap, a tunnel junction between this superconductor and a normal metal cools the latter.
While the study of such devices has long been focused to structures of submicron size and consequently cooling power in the picowatt range, we have led a thorough study of devices with a large cooling power up to the nanowatt range.
Here we describe how their performance can be optimized by using a quasi-particle drain and tuning the cooling junctions’ tunnel barrier
When biased at a voltage just below a superconductor’s energy gap, a tunnel junction between this superconductor and a normal metal cools the latter.
While the study of such devices has long been focused to structures of submicron size and consequently cooling power in the picowatt range, we have led a thorough study of devices with a large cooling power up to the nanowatt range.
Here we describe how their performance can be optimized by using a quasi-particle drain and tuning the cooling junctions’ tunnel barrier
Title: | High-performance electronic cooling with superconducting tunnel junctions |
Authors: | Courtois, Herve Nguyen, Hung Q. Winkelmann, Clemens B. |
Keywords: | Electronic cooling Superconducting tunnel junctions Thermo-electricity |
Issue Date: | 2016 |
Publisher: | H. : ĐHQGHN |
Citation: | ISIKNOWLEDGE |
Abstract: | When biased at a voltage just below a superconductor’s energy gap, a tunnel junction between this superconductor and a normal metal cools the latter. While the study of such devices has long been focused to structures of submicron size and consequently cooling power in the picowatt range, we have led a thorough study of devices with a large cooling power up to the nanowatt range. Here we describe how their performance can be optimized by using a quasi-particle drain and tuning the cooling junctions’ tunnel barrier |
Description: | TNS06308 ; COMPTES RENDUS PHYSIQUE Volume: 17 Issue: 10 Pages: 1139-1145 |
URI: | http://repository.vnu.edu.vn/handle/VNU_123/25965 |
Appears in Collections: | Bài báo của ĐHQGHN trong Web of Science |
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